 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTD4302 Power MOSFET 68 A, 30 V, N-Channel DPAK Features * * * * * * * * Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature DPAK Mounting Information Provided Pb-Free Packages are Available http://onsemi.com V(BR)DSS 30 V RDS(on) TYP 7.8 mW @ 10 V ID MAX 68 A N-Channel D Applications * DC-DC Converters * Low Voltage Motor Control * Power Management in Portable and Battery Powered Products: i.e., Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards G S 4 4 12 3 1 2 3 CASE 369C DPAK (Surface Mount) STYLE 2 CASE 369D DPAK-3 (Straight Lead) - STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENTS 4 Drain YWW T 4302 4 Drain YWW T 4302 3 Source 1 Gate 2 Drain 3 Source = Device Code = Year = Work Week Publication Order Number: NTD4302/D 1 Gate 2 Drain T4302 Y WW ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2004 1 November, 2004 - Rev. 6 NTD4302 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance - Junction-to-Case Total Power Dissipation @ TC = 25C Continuous Drain Current @ TC = 25C (Note 4) Continuous Drain Current @ TC = 100C Thermal Resistance - Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 100C Pulsed Drain Current (Note 3) Thermal Resistance - Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 100C Pulsed Drain Current (Note 3) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting T J = 25C (VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 17 Apk, L = 5.0 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS RqJC PD ID ID RqJA PD ID ID IDM RqJA PD ID ID IDM TJ, Tstg EAS TL Value 30 20 1.65 75 68 43 67 1.87 11.3 7.1 36 120 1.04 8.4 5.3 28 -55 to 150 722 260 Unit Vdc Vdc C/W W A A C/W W A A A C/W W A A A C mJ C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 4. Current Limited by Internal Lead Wires. ORDERING INFORMATION Device NTD4302 NTD4302G NTD4302-001 NTD4302T4 NTD4302T4G Package Type DPAK DPAK DPAK-3 DPAK DPAK Package 369C 369C (Pb-Free) 369D 369C 369C (Pb-Free) Shipping 75 Units / Rail 75 Units / Rail 75 Units / Rail 2500 Tape & Reel 2500 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD4302 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mA) Positive Temperature Coefficient Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 30 Vdc, TJ = 25C) (VGS = 0 Vdc, VDS = 30 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Negative Temperature Coefficient Static Drain-Source On-State Resistance (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 10 Adc) (VGS = 4.5 Vdc, ID = 5.0 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ga e C a ge Gate Charge (VDS = 24 Vdc, ID = 2.0 Adc, Vd 2 0 Ad VGS = 10 Vdc) BODY-DRAIN DIODE RATINGS (Note 5) Diode Forward On-Voltage (IS = 2.3 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc) (IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125C) Reverse Recovery Time e e se eco e y e (IS = 2.3 Adc, VGS = 0 Vdc, 2 3 Ad Vd dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 5. Indicates Pulse Test: Pulse Width = 300 msec max, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperature. VSD - - - trr ta tb Qrr - - - - 0.75 0.90 0.65 39 20 19 0.043 1.0 - - 65 - - - mC ns s Vdc (VDD = 24 Vdc, ID = 20 Adc, VGS = 10 Vdc, Vdc RG = 2.5 W) (VDD = 25 Vdc, ID = 1.0 Adc, VGS = 10 Vdc, Vdc RG = 2.5 W) (VDD = 25 Vdc, ID = 1.0 Adc, VGS = 10 Vdc, Vdc RG = 6.0 W) td(on) tr td(off) tf td(on) tr td(off) tf td(on) tr td(off) tf QT Qgs (Q1) Qgd (Q2) - - - - - - - - - - - - - - - 11 15 85 55 11 13 55 40 15 25 40 58 55 5.5 15 20 25 130 90 20 20 90 75 - - - - 80 - - nC ns ns ns (VDS = 24 Vdc, VGS = 0 Vdc, Vd Vd 1.0 f = 1 0 MHz) Ciss Coss Crss - - - 2050 640 225 2400 800 310 pF VGS(th) 1.0 - RDS(on) - - - gFS - 0.0078 0.0078 0.010 20 0.010 0.010 0.013 - Mhos 1.9 -3.8 3.0 - W Vdc V(BR)DSS 30 - IDSS - - IGSS - - - - 1.0 10 100 nAdc - 25 - - Vdc mV/C mAdc Symbol Min Typ Max Unit http://onsemi.com 3 NTD4302 50 ID, DRAIN CURRENT (AMPS) 60 VDS > = 10 V ID, DRAIN CURRENT (AMPS) 50 40 30 20 10 0 TJ = 25C TJ = 100C TJ = -55C VGS = 4 V TJ = 25C VGS = 3.8 V 40 VGS = 4.4 V VGS = 4.6 V VGS = 5 V VGS = 7 V VGS = 10 V 30 20 VGS = 3.4 V VGS = 3.2 V VGS = 3.0 V 10 0 0 0.5 1 VGS = 2.8 V 1.5 2 2.5 3 2 3 4 5 6 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.1 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID = 10 A TJ = 25C 0.015 TJ = 25C 0.075 VGS = 4.5 V 0.01 0.05 VGS = 10 V 0.005 0.025 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 0.00E+00 0 1.00E+01 2.00E+01 3.00E+01 4.00E+01 5.00E+01 6.00E+01 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-To-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 ID = 18.5 A VGS = 10 V 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1.4 1.2 IDSS, LEAKAGE (nA) 1000 100 TJ = 100C 10 1 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-To-Source Leakage Current vs. Voltage http://onsemi.com 4 NTD4302 6000 VDS = 0 V 5000 C, CAPACITANCE (pF) Ciss 4000 3000 2000 Crss VGS 0 VDS Coss VGS = 0 V TJ = 25C 12.5 QT VD 30 VDS, DRAIN-TO-SOURCE- VOLTAGE (V) 1 VGS, GATE-TO-SOURCE- VOLTAGE (V) 10 25 7.5 VGS 5 Q1 Q2 20 Crss Ciss 15 1000 0 10 2.5 ID = 2 A TJ = 25C 0 10 20 30 40 50 Qg, TOTAL GATE CHARGE (nC) 10 10 20 30 0 0 60 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1000 IS, SOURCE CURRENT (AMPS) VDD = 24 V ID = 18.5 A VGS = 10 V t, TIME (ns) 25 VGS = 0 V TJ = 25C 20 15 100 tf td(off) tr td(on) 10 1 10 RG, GATE RESISTANCE (W) 100 10 5 0 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 5 NTD4302 100 ID , DRAIN CURRENT (AMPS) 100 ms di/dt VGS = 10 V SINGLE PULSE TC = 25C 1 ms IS trr ta 10 ms dc tp IS 10 100 0.25 IS tb TIME 10 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.1 1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Diode Reverse Recovery Waveform 1000 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE DUTY CYCLE 100 D = 0.5 0.2 0.1 0.05 0.02 0.01 MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT 10 1 P(pk) t2 DUTY CYCLE, D = t1/t2 1E-03 1E-02 1E-01 t, TIME (seconds) 1E+00 t1 0.1 SINGLE PULSE 0.01 1E-05 1E-04 RqJA(t) = r(t) RqJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RqJA(t) 1E+02 1E+03 1E+01 Figure 13. Thermal Response - Various Duty Cycles http://onsemi.com 6 NTD4302 PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NTD4302 PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTD4302/D |
Price & Availability of NTD4302T4G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |